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 TO-3PF 16A Triac
TM1641B-L, TM1661B-L
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=16A qGate trigger current: IGT=30mA max (MODE , , qIsolation voltage: VISO=2000V(AC, 1min.) qUL approved type available
5.450.1 15.60.2 1.5 4.4 1.5
External Dimensions
(Unit: mm)
3.20.2 5.50.2 9.50.2 230.3
5.50.2 3.450.2
qRate-of-rise of off-state commutation voltage: (dv/dt)c=10V/s min.
1.6 3.3
)
a b
3.350.2
+0.2 1.75-0.1 +0.2 2.15 -0.1 +0.2 1.05-0.1 5.450.1
(16.2) +0.2 0.65-0.1
(1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G)
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 6.5g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO
Ratings
TM1641B-L 400 16 160 10 2 5 0.5 - 40 to +125 - 40 to +125 2000 TM1661B-L 600
Unit
V A A V A W W C C Vrms
Conditions
Conduction angle 360, Tc=92.5C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz, duty 50Hz, duty 10% 10% 10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current On-state voltage
Symbol
IDRM VTM
Ratings
min typ 0.1 max 2.0 0.1 1.6 0.8 1.5 1.5 1.5 30 30 30 0.7 0.8 1.0 12 16 25 70 0.2 25 10 1.8
Unit
mA V
Conditions
VD=VDRM, RGK=, Tj=125C VD=VDRM, RGK=, Tj=25C ITM=20A, TC=25C T2 , G
+ + - - + -
Gate trigger voltage
VGT
V
VD=6V, RL=10, TC=25C
T2 , G T2 , G T2 , G
+ + - -
- + + -
T2 , G mA VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G V mA V/s
C/W
Gate trigger current
IGT
- +
Gate non-trigger voltage Holding current Rate-of-rise of off-state commutation voltage Thermal resistance
VGD IH (dv/dt)c Rth
VD=1/2xVDRM, Tj=125C Tj=25C VD=400V, Tj=125C Junction to case
48
TM1641B-L, TM1661B-L
vT - iT Characteristics (max)
100 Surge on-state current ITSM (A)
ITSM Ratings
180 160 140 120 100 80 60 40 20
Initial junction temperature Tj=125C ITSM 10 ms 1cycle
IT(RMS) - PT(AV) Characteristics
20 Average on-state power PT(AV) (W)
Full-cycle sinewave Conduction angle :360
iT (A)
Tj =125C 10 Tj =25C
16
On-state current
12
8
1
4 0
0.1 0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
1
5
10
50
100
0
4
8
12
16
On-state voltage
vT ( V )
Number of cycle
RMS on-state current IT(RMS) (A)
IT(RMS) - Tc Ratings
150
Full-cycle sinewave Conduction angle :360
Gate Characteristics
50 Mode
VGT temperature characteristics
(Typical)
2.0 (VD=6V RL=10 ) Mode
Gate trigger voltage VGT (V)
Case temperature TC (C)
125
vGF (V)
10
VGM =10V PGM =5W -40C VGT=1.8V -40C IGT=75mA PG(AV)=0.5W IGM =2A
1.6
100 75 50 25
1.2
Gate voltage
1
25C VGT=1.5V
25C IGT=30mA
0.8
0.4
VGD=0.2V 0 0 4 8 12 16 20 0 1 10 100 1000 5000 0 -40 -25 0 25 50 75 100 125
RMS on-state current IT(RMS) (A)
Gate current
iGF (mA)
Junction temperature Tj (C)
IGT temperature characteristics
(Typical)
100 Gate trigger current IGT (mA) 50 (VD=6V RL=10 ) Mode
IH temperature characteristics
(Typical)
1000 (RG-K=1k)
IL temperature characteristics
(Typical)
1000 (RG-K= )
Latching current IL (mA) 0 25 50 75 100 125
Holding current IH (mA)
100
100
10 5
10
10
1 -40 -25
0
25
50
75
100
125
1 -40 -25
1 -40 -25
0
25
50
75
100
125
Junction temperature Tj (C)
Junction temperature Tj (C)
Junction temperature Tj (C)
rth(j-c) - t Characteristics
rth (j-c) (C/W)
Transient thermal resistance 5
1
0.5 1
10
102
103
104
105
t, Time (ms)
49


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